Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Science

Volumn 349, Issue 6247, 2015, Pages 524-528

  Li, Ming Yang ^a,b   Shi, Yumeng ^a   Cheng, Chia Chin ^b,c   Lu, Li Syuan ^c   Lin, Yung Chang ^d   Tang, Hao Lin ^a   Tsai, Meng Lin ^a   Chu, Chih Wei ^b   Wei, Kung Hwa ^c   He, Jr Hau ^a   Chang, Wen Hao ^c,e   Suenaga, Kazu ^d   Li, Lain Jong ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^e MINISTRY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; MOLYBDENUM; SULFIDE; TUNGSTEN;

ELECTROCHEMICAL METHOD; ELECTROCHEMISTRY; ELECTRODE; OPTICAL PROPERTY; PHOTOVOLTAIC SYSTEM; TRANSITION ELEMENT;

ARTICLE; CHEMICAL COMPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONICS; LIGHT EMITTING DIODE; MICROSCOPY; ONE POT SYNTHESIS; OPTICS; PHOTOLUMINESCENCE; PRIORITY JOURNAL; RAMAN SPECTROMETRY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR; THERMODYNAMICS;

EID: 84940529342     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.aab4097     Document Type: Article

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