Improving contact resistance in MoS2 field effect transistors

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2014, Pages 193-194

  English, Chris D ^a   Shine, Gautam ^a   Dorgan, Vincent E ^b   Saraswat, Krishna C ^a   Pop, Eric ^a  

^a Stanford University   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FIELD EFFECT TRANSISTORS; SCANDIUM;

ACCESS RESISTANCE; CONTACT RESISTIVITIES; DEPOSITION CONDITIONS; FIELD EFFECT TRANSISTOR (FETS); METAL DEPOSITION; SYSTEMATIC STUDY;

CONTACT RESISTANCE;

EID: 84906534588     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2014.6872363     Document Type: Conference Paper

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3. B. Radisavljevic et al., Nat. Nano. 6(2011).
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5. J. Wager etal., JAP 109 (2011).
6. ITRS 2012,Table FEP12.