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Volumn 28, Issue 21, 2016, Pages 4120-4125

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures

(8) Liu, Yuan a Sheng, Jiming a Wu, Hao a He, Qiyuan b Cheng, Hung Chieh a Shakir, Muhammad Imran c Huang, Yu a Duan, Xiangfeng b

a Engineering IV (United States)

b UNIVERSITY OF CALIFORNIA (United States)

c KING SAUD UNIVERSITY (Saudi Arabia)

Author keywords

graphene; graphene silicon junctions; high current density; tunneling transistors; vertical transistors

Indexed keywords

ELECTRIC FIELDS; ELECTRON EMISSION; GRAPHENE; SILICON; TRANSISTORS;

CARRIER TRANSPORT MECHANISMS; HIGH CURRENT DENSITIES; MEASUREMENT TEMPERATURES; SILICON JUNCTION; THERMIONIC EFFECTS; TUNNELING EFFECTS; VERTICAL TRANSISTORS; VERTICAL TUNNELING;

GRAPHENE TRANSISTORS;

EID: 84963591529 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201506173 Document Type: Article

Times cited : (49)

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