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Volumn 15, Issue 1, 2015, Pages 709-713

Large area growth and electrical properties of p-type WSe2 atomic layers

Author keywords

field effect transistor; large area growth; layered materials; semiconductor; tungsten diselenide

Indexed keywords

ATOMS; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; ENERGY GAP; FILM GROWTH; GROWTH (MATERIALS); HOLE MOBILITY; MONOLAYERS; MULTILAYERS; SELENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; TRANSISTORS; TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN;

EID: 84920986820     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl504256y     Document Type: Article
Times cited : (392)

References (40)
  • 6
    • 84864250902 scopus 로고    scopus 로고
    • Bao, Q. L.; Loh, K. P. ACS Nano 2012, 6 (5) 3677-3694
    • (2012) ACS Nano , vol.6 , Issue.5 , pp. 3677-3694
    • Bao, Q.L.1    Loh, K.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.