Resonant tunnelling and negative differential conductance in graphene transistors

Nature Communications

Volumn 4, Issue , 2013, Pages

  Britnell, L ^a   Gorbachev, R V ^a   Geim, A K ^a   Ponomarenko, L A ^a   Mishchenko, A ^a   Greenaway, M T ^b   Fromhold, T M ^b   Novoselov, K S ^a   Eaves, L ^a,b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE NANOTUBE; GRAPHENE;

ALKENE; CRYSTAL STRUCTURE; ELECTRODE; FREQUENCY ANALYSIS; TEMPERATURE EFFECT; TUNNELING; TWO-DIMENSIONAL MODELING;

ARTICLE; ELECTRIC POTENTIAL; ELECTRODE; ELECTRONICS; RESONANT TUNNELLING; ROOM TEMPERATURE; SEMICONDUCTOR;

EID: 84877747763     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2817     Document Type: Article

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