Very large current modulation in vertical heterostructure graphene/hBN transistors

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 268-273

  Fiori, Gianluca ^a   Bruzzone, Samantha ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

Computational electronics; electron devices; graphene; nanoelectronics

Indexed keywords

COMPUTATIONAL ELECTRONICS; ELECTRICAL BEHAVIORS; GATE CONTACT; LARGE CURRENT; MULTIPHYSICS SIMULATIONS; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; NUMERICAL CALCULATION; ORDERS OF MAGNITUDE; SUBTHRESHOLD SWING; VERTICAL HETEROSTRUCTURE;

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRON DEVICES; HETEROJUNCTIONS; MODULATION; NANOELECTRONICS;

GRAPHENE;

EID: 84871807243     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2226464     Document Type: Article

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