Erratum: All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor (Nano Letters (2014) 14:5 (2861?2866) DOI: 10.1021/nl5009037);All two-dimensional, flexible, transparent, and thinnest thin film transistor

Nano Letters

Volumn 14, Issue 5, 2014, Pages 2861-2866

  Das, Saptarshi ^a,b   Gulotty, Richard ^a,c   Sumant, Anirudha V ^a   Roelofs, Andreas ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b PURDUE UNIVERSITY   (United States)

^c University of California Riverside   (United States)

Author keywords

2D Crystal; flexible electronics; graphene; thin film transistor

Indexed keywords

AMORPHOUS SILICON; BORON NITRIDE; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; GATE DIELECTRICS; GRAPHENE; GRAPHENE TRANSISTORS; SELENIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SLOPE STABILITY; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; TUNGSTEN COMPOUNDS;

2-D CRYSTALS; CHANNEL MATERIALS; DEVICE CHARACTERISTICS; FLEXIBLE SUBSTRATE; SUBTHRESHOLD SLOPE; TEMPERATURE STABILITY; TRANSPARENT THIN FILM TRANSISTOR; TWO DIMENSIONAL (2 D);

THIN FILM TRANSISTORS;

EID: 84900508929     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.6b00352     Document Type: Erratum

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