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Applied Physics Letters

Volumn 107, Issue 2, 2015, Pages

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

(6) Sata, Yohta a Moriya, Rai a Morikawa, Sei a Yabuki, Naoto a Masubuchi, Satoru a,b Machida, Tomoki a,b

a INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; VAN DER WAALS FORCES;

ELECTRIC FIELD MODULATION; ELECTRONICS APPLICATIONS; EXTERNAL ELECTRIC FIELD; HETERO INTERFACES; HIGH-QUALITY INTERFACE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; VERTICAL FIELD EFFECT TRANSISTORS;

GRAPHENE;

EID: 84937459193 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4926973 Document Type: Article

Times cited : (88)

References (23)

1
- 84881167566
- A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013). 10.1038/nature12385
- (2013) Nature , vol.499 , pp. 419
- Geim, A.K.¹ Grigorieva, I.V.²

2
- 84873570571
- T. Georgiou, R. Jalil, B. D. Belle, L. Britnell, R. V. Gorbachev, S. V. Morozov, Y.-J. Kim, A. Gholinia, S. J. Haigh, O. Makarovsky, L. Eaves, L. A. Ponomarenko, A. K. Geim, K. S. Novoselov, and A. Mishchenko, Nat. Nanotechnol. 8, 100 (2013). 10.1038/nnano.2012.224
- (2013) Nat. Nanotechnol. , vol.8 , pp. 100
- Georgiou, T.¹ Jalil, R.² Belle, B.D.³ Britnell, L.⁴ Gorbachev, R.V.⁵ Morozov, S.V.⁶ Kim, Y.-J.⁷ Gholinia, A.⁸ Haigh, S.J.⁹ Makarovsky, O.¹⁰ Eaves, L.¹¹ Ponomarenko, L.A.¹² Geim, A.K.¹³ Novoselov, K.S.¹⁴ Mishchenko, A.¹⁵

3
- 84875416311
- W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan, Nat. Mater. 12, 246 (2013). 10.1038/nmat3518
- (2013) Nat. Mater. , vol.12 , pp. 246
- Yu, W.J.¹ Li, Z.² Zhou, H.³ Chen, Y.⁴ Wang, Y.⁵ Huang, Y.⁶ Duan, X.⁷

4
- 84907302877
- R. Moriya, T. Yamaguchi, Y. Inoue, S. Morikawa, Y. Sata, S. Masubuchi, and T. Machida, Appl. Phys. Lett. 105, 083119 (2014). 10.1063/1.4894256
- (2014) Appl. Phys. Lett. , vol.105
- Moriya, R.¹ Yamaguchi, T.² Inoue, Y.³ Morikawa, S.⁴ Sata, Y.⁵ Masubuchi, S.⁶ Machida, T.⁷

5
- 84918768660
- T. Yamaguchi, R. Moriya, Y. Inoue, S. Morikawa, S. Masubuchi, K. Watanabe, T. Taniguchi, and T. Machida, Appl. Phys. Lett. 105, 223109 (2014). 10.1063/1.4903190
- (2014) Appl. Phys. Lett. , vol.105
- Yamaguchi, T.¹ Moriya, R.² Inoue, Y.³ Morikawa, S.⁴ Masubuchi, S.⁵ Watanabe, K.⁶ Taniguchi, T.⁷ Machida, T.⁸

6
- 84878942676
- L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, Science 340, 1311 (2013). 10.1126/science.1235547
- (2013) Science , vol.340 , pp. 1311
- Britnell, L.¹ Ribeiro, R.M.² Eckmann, A.³ Jalil, R.⁴ Belle, B.D.⁵ Mishchenko, A.⁶ Kim, Y.J.⁷ Gorbachev, R.V.⁸ Georgiou, T.⁹ Morozov, S.V.¹⁰ Grigorenko, A.N.¹¹ Geim, A.K.¹² Casiraghi, C.¹³ Neto, A.H.C.¹⁴ Novoselov, K.S.¹⁵

7
- 84890561318
- W. J. Yu, Y. Liu, H. Zhou, A. Yin, Z. Li, Y. Huang, and X. Duan, Nat. Nanotechnol. 8, 952 (2013). 10.1038/nnano.2013.219
- (2013) Nat. Nanotechnol. , vol.8 , pp. 952
- Yu, W.J.¹ Liu, Y.² Zhou, H.³ Yin, A.⁴ Li, Z.⁵ Huang, Y.⁶ Duan, X.⁷

8
- 84910623221
- A. Avsar, J. Y. Tan, T. Taychatanapat, J. Balakrishnan, G. K. W. Koon, Y. Yeo, J. Lahiri, A. Carvalho, A. S. Rodin, E. C. T. O'Farrell, G. Eda, A. H. Castro Neto, and B. Özyilmaz, Nat. Commun. 5, 4875 (2014). 10.1038/ncomms5875
- (2014) Nat. Commun. , vol.5 , pp. 4875
- Avsar, A.¹ Tan, J.Y.² Taychatanapat, T.³ Balakrishnan, J.⁴ Koon, G.K.W.⁵ Yeo, Y.⁶ Lahiri, J.⁷ Carvalho, A.⁸ Rodin, A.S.⁹ O'Farrell, E.C.T.¹⁰ Eda, G.¹¹ Castro Neto, A.H.¹² Özyilmaz, B.¹³

9
- 84922697328
- D. Akinwande, N. Petrone, and J. Hone, Nat. Commun. 5, 5678 (2014). 10.1038/ncomms6678
- (2014) Nat. Commun. , vol.5 , pp. 5678
- Akinwande, D.¹ Petrone, N.² Hone, J.³

10
- 77957204738
- K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, Phys. Rev. Lett. 105, 136805 (2010). 10.1103/PhysRevLett.105.136805
- (2010) Phys. Rev. Lett. , vol.105
- Mak, K.F.¹ Lee, C.² Hone, J.³ Shan, J.⁴ Heinz, T.F.⁵

11
- 84869192373
- S. Tongay, J. Zhou, C. Ataca, K. Lo, T. S. Matthews, J. Li, J. C. Grossman, and J. Wu, Nano Lett. 12, 5576 (2012). 10.1021/nl302584w
- (2012) Nano Lett. , vol.12 , pp. 5576
- Tongay, S.¹ Zhou, J.² Ataca, C.³ Lo, K.⁴ Matthews, T.S.⁵ Li, J.⁶ Grossman, J.C.⁷ Wu, J.⁸

12
- 84871091724
- H. Peelaers and C. G. Van de Walle, Phys. Rev. B 86, 241401 (2012). 10.1103/PhysRevB.86.241401
- (2012) Phys. Rev. B , vol.86
- Peelaers, H.¹ Van De Walle, C.G.²

13
- 84872333981
- J. Kang, S. Tongay, J. Zhou, J. Li, and J. Wu, Appl. Phys. Lett. 102, 012111 (2013). 10.1063/1.4774090
- (2013) Appl. Phys. Lett. , vol.102
- Kang, J.¹ Tongay, S.² Zhou, J.³ Li, J.⁴ Wu, J.⁵

14
- 84874582246
- J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, Nat. Commun. 4, 1474 (2013). 10.1038/ncomms2498
- (2013) Nat. Commun. , vol.4 , pp. 1474
- Ross, J.S.¹ Wu, S.² Yu, H.³ Ghimire, N.J.⁴ Jones, A.M.⁵ Aivazian, G.⁶ Yan, J.⁷ Mandrus, D.G.⁸ Xiao, D.⁹ Yao, W.¹⁰ Xu, X.¹¹

15
- 77957908617
- C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010). 10.1038/nnano.2010.172
- (2010) Nat. Nanotechnol. , vol.5 , pp. 722
- Dean, C.R.¹ Young, A.F.² Meric, I.³ Lee, C.⁴ Wang, L.⁵ Sorgenfrei, S.⁶ Watanabe, K.⁷ Taniguchi, T.⁸ Kim, P.⁹ Shepard, K.L.¹⁰ Hone, J.¹¹

16
- 77957888880
- T. Taychatanapat and P. Jarillo-Herrero, Phys. Rev. Lett. 105, 166601 (2010). 10.1103/PhysRevLett.105.166601
- (2010) Phys. Rev. Lett. , vol.105
- Taychatanapat, T.¹ Jarillo-Herrero, P.²

17
- 0004005306
- 3rd ed. (Wiley, New York)
- S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007), p. 134.
- (2007) Physics of Semiconductor Devices , pp. 134
- Sze, S.M.¹ Ng, K.K.²

18
- 84926390247
- Y. Sata, R. Moriya, T. Yamaguchi, Y. Inoue, S. Morikawa, N. Yabuki, S. Masubuchi, and T. Machida, Jpn. J. Appl. Phys., Part 1 54, 04DJ04 (2015). 10.7567/JJAP.54.04DJ04
- (2015) Jpn. J. Appl. Phys., Part 1 , vol.54
- Sata, Y.¹ Moriya, R.² Yamaguchi, T.³ Inoue, Y.⁴ Morikawa, S.⁵ Yabuki, N.⁶ Masubuchi, S.⁷ Machida, T.⁸

19
- 84930665695
- R. Moriya, T. Yamaguchi, Y. Inoue, Y. Sata, S. Morikawa, S. Masubuchi, and T. Machida, Appl. Phys. Lett. 106, 223103 (2015). 10.1063/1.4921920
- (2015) Appl. Phys. Lett. , vol.106
- Moriya, R.¹ Yamaguchi, T.² Inoue, Y.³ Sata, Y.⁴ Morikawa, S.⁵ Masubuchi, S.⁶ Machida, T.⁷

20
- 84868355107
- A. Kumar and P. K. Ahluwalia, Physica B 407, 4627 (2012). 10.1016/j.physb.2012.08.034
- (2012) Physica B , vol.407 , pp. 4627
- Kumar, A.¹ Ahluwalia, P.K.²

21
- 0030206561
- C. Subhash and K. Jitendra, Semicond. Sci. Technol. 11, 1203 (1996). 10.1088/0268-1242/11/8/015
- (1996) Semicond. Sci. Technol. , vol.11 , pp. 1203
- Subhash, C.¹ Jitendra, K.²

22
- 0001538074
- M. Missous and E. H. Rhoderick, J. Appl. Phys. 69, 7142 (1991). 10.1063/1.347604
- (1991) J. Appl. Phys. , vol.69 , pp. 7142
- Missous, M.¹ Rhoderick, E.H.²

23
- 84906085945
- D. Sinha and J. U. Lee, Nano Lett. 14, 4660 (2014). 10.1021/nl501735k
- (2014) Nano Lett. , vol.14 , pp. 4660
- Sinha, D.¹ Lee, J.U.²

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