High-performance MoS2 transistors with low-resistance molybdenum contacts

Applied Physics Letters

Volumn 104, Issue 9, 2014, Pages

  Kang, Jiahao ^a   Liu, Wei ^a   Banerjee, Kaustav ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; MONOLAYERS; SCHOTTKY BARRIER DIODES; SULFUR COMPOUNDS;

CONTACT INTERFACE; FERMI LEVEL PINNING; FUNCTION VALUES; LOW RESISTANCE; MOLYBDENUM CONTACT; MOLYBDENUM DISULPHIDE; PHYSICAL NATURE; SCHOTTKY BARRIERS;

MOLYBDENUM COMPOUNDS;

EID: 84896779852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4866340     Document Type: Article

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