Diffusion of n -type dopants in germanium

Applied Physics Reviews

Volumn 1, Issue 1, 2014, Pages

  Chroneos, A ^a,b   Bracht, H ^c  

^a OPEN UNIVERSITY   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DOPING (ADDITIVES); GERMANIUM; MATERIALS PROPERTIES; POINT DEFECTS;

DEFECT ENGINEERING; DIFFUSION MECHANISMS; DOPANT DIFFUSION; ELECTRICAL ACTIVATION; INTRINSIC DEFECTS; N-TYPE DOPANTS; NANOELECTRONIC APPLICATIONS; P-TYPE DOPANT;

DIFFUSION;

EID: 84894672889     PISSN: None     EISSN: 19319401     Source Type: Journal    
DOI: 10.1063/1.4838215     Document Type: Article

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