B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Applied Physics Letters

Volumn 70, Issue 17, 1997, Pages 2285-2287

  Pelaz, L ^a,b   Jaraiz, M ^a,b   Gilmer, G H ^a   Gossmann, H J ^a   Rafferty, C S ^a   Eaglesham, D J ^a   Poate, J M ^a,c  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001282491     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118839     Document Type: Article

References (12)

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10. i and B-I pair are extracted from Ref. 7. The rest are derived from the experiments presented here.
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12. A. Armigliato, D. Nobili, P. Ostoja, M. Servidori, and S. Solmi, in Semiconductor Silicon 1977, edited by H. R. Huffand E. Sirtl (Electrochemical Society, Pennington, NJ), p. 638.