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Volumn 95, Issue 25, 2009, Pages

Millisecond flash lamp annealing of shallow implanted layers in Ge

(11) Wundisch C a Posselt, M a Schmidt, B a Heera, V a Schumann, T a Mucklich A a Grotzschel R a Skorupa, W a Clarysse, T b Simoen, E b Hortenbach, H c,d

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

b IMEC (Belgium)

c Fraunhofer Center Nanoelectronic Technologies (Germany)

d SGS Institut Fresenius GmbH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL ANNEALING; DOPANT REDISTRIBUTION; ELECTRICAL ACTIVATION; FLASH DURATION; FLASH LAMP ANNEALING; HEAT INPUT; IMPLANTED LAYERS; MASS ACTION; P-DIFFUSION; PRE-TREATMENT; VACANCY CLUSTER;

GERMANIUM; PHOSPHORUS; PLASMAS; RAPID THERMAL ANNEALING;

DIFFUSION;

EID: 73449111569 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3276770 Document Type: Article

Times cited : (66)

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