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Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

End of range defects in Ge

(7) Koffel, S a,b Cherkashin, N a Houdellier, F a Hytch, M J a Benassayag, G a Scheiblin, P b Claverie, A a

a UNIVERSITÉ DE TOULOUSE (France)

b CEA LETI (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; ANNEALING TEMPERATURES; END-OF-RANGE DEFECTS; EXTENDED DEFECT; IMPLANTED DOPANTS; INTERSTITIAL ATOMS; OSTWALD RIPENING MECHANISM; SOLID PHASE EPITAXIAL REGROWTH;

CRYSTAL GROWTH; DEFECTS; EPITAXIAL LAYERS; ION BOMBARDMENT; ION IMPLANTATION; OSTWALD RIPENING;

GERMANIUM;

EID: 67650236709 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3153985 Document Type: Conference Paper

Times cited : (44)

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