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Journal of Applied Physics

Volumn 87, Issue 9 I, 2000, Pages 4160-4163

Generation of Frenkel defects in heavily arsenic doped silicon: A first-principles study

(2) Xie, Jianjun a Chen, S P a

a LOS ALAMOS NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005852394 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373046 Document Type: Article

Times cited : (21)

References (18)

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