Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

Journal of Applied Physics

Volumn 112, Issue 12, 2012, Pages

  Londos, C A ^a   Sgourou, E N ^a   Chroneos, A ^b,c  

^a UNIVERSITY OF ATHENS   (Greece)

^b OPEN UNIVERSITY   (United Kingdom)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRON IRRADIATION; INFRARED SPECTROSCOPY; LEAD; OXYGEN; OXYGEN VACANCIES; TIN; VANADIUM DIOXIDE;

CONVERSION RATIO; CZOCHRALSKI SILICON; DEFECT ENGINEERING; EVOLUTION OF OXYGEN; INTRINSIC DEFECTS; IRRADIATED SILICONS; SI-BASED DEVICES; VACANCY CLUSTERING;

SILICON;

EID: 84886843151     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4770488     Document Type: Article

References (56)

1. Oxygen in Silicon, edited by, F. Shimura, Semiconductors and Semimetals Vol. 42 (Academic, Orlando, 1994).
2. Early Stages of Oxygen Precipitation in Silicon, edited by, R. Jones, (Kluwer Academic, Dordrecht, 1996).
3. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961). 10.1103/PhysRev.121.1001
4. J. W. Corbett, G. D. Watkins, and R. S. Mc Donald, Phys. Rev. 135, A1381 (1964). 10.1103/PhysRev.135.A1381
5. Y. H. Lee and J. W. Corbett, Phys. Rev. 13, 2653 (1976). 10.1103/Phys.RevB.13.2653
6. J. L. Lindström and B. G. Svensson, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, MRS Symposia Proceedings No. 59 (Materials Research Society, Pittsburgh, 1986), p. 45.
7. C. A. Londos, Phys. Status Solidi A 113, 503 (1989); 10.1002/pssa.v113:2
8. C. A. Londos, Phys. Status Solidi A 92, 609 (1985). 10.1002/pssa.v92:2
9. M. Furuhashi and K. Taniguchi, Appl. Phys. Lett. 86, 142107 (2005). 10.1063/1.1897433
10. M. Pesola, J. von Boehm, T. Mattila, and R. M. Nieminen, Phys. Rev. B 60, 11449 (1999). 10.1103/PhysRevB.60.11449
11. J. Coutinho, R. Jones, P. R. Briddon, and S. Öberg, Phys. Rev. B 62, 10824 (1985). 10.1103/PhysRevB.62.10824
12. A. Chroneos and C. A. Londos, J. Appl. Phys. 107, 093518 (2010); 10.1063/1.3409888
13. A. Chroneos, E. N. Sgourou, and C. A. Londos, J. Appl. Phys. 112, 073706 (2012); 10.1063/1.4757406
14. C. A. Londos, E. N. Sgourou, A. Chroneos, and V. V. Emtsev, Semicond. Sci. Technol. 26, 105024 (2011). 10.1088/0268-1242/26/10/105024
15. S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982). 10.1063/1.331460
16. V. V. Voronkov and R. Falster, J. Electrochem. Soc. 149, G167 (2002).
17. J. L. Lindström, L. I. Murin, V. P. Markevich, T. Hallberg, and B. G. Svensson, Physica B: Condens. Matter 273-274, 291 (1999). 10.1016/S0921-4526(99)00447-0
18. V. P. Markevich, A. R. Peaker, S. B. Lastovskii, L. I. Murin, and J. L. Lindström, J. Phys.: Condens. Matter 15, S2779 (2003). 10.1088/0953-8984/ 15/39/002
19. Y. H. Lee, J. C. Correlli, and J. W. Corbett, Phys. Lett. A 60, 55 (1977). 10.1016/0375-9601(77)90319-X
20. C. A. Londos, L. G. Fytros, and G. J. Georgiou, Defect Diffus. Forum 171-172, 1 (1999) 10.4028/www.scientific.net/DDF.171-172.1
21. V. P. Markevich, A. R. Peaker, S. B. Lastovskii, L. I. Murin, J. Coutinho, V. J. B. Torres, P. R. Briddon, L. Dobaczewski, E. V. Monakhov, and B. G. Svensson, Phys. Rev. B 80, 235207 (2009). 10.1103/PhysRevB.80.235207
22. K. Gill, G. Hall, and B. Mac Envoy, J. Appl. Phys. 82, 126 (1997). 10.1063/1.365790
23. A. Hallen, N. Keskitalo, F. Masszi, and V. Nagl, J. Appl. Phys. 79, 3906 (1996). 10.1063/1.361816
24. T. Umeda, Y. Mochizuki, K. Okonogi, and K. Hamada, Physica B: Condes. Matter 308-310, 1169 (2001). 10.1016/S0921-4526(01)00928-0
25. R. Siemieniee, F. J. Niedernostheide, H. J. Schulze, W. Sudkamp, U. Kellner-Werdehausen, and J. Lutz, J. Electrochem. Soc. 153, G108 (2006). 10.1149/1.2137649
26. L. I. Murin, B. G. Svensson, J. L. Lindstrom, V. P. Markevich, and C. A. Londos, Solid State Phenom. 156-158, 129 (2010). 10.4028/www.scientific.net/SSP. 156-158.129
27. N. V. Sarlis, C. A. Londos, and L. G. Fytros, J. Appl. Phys. 81, 1645 (1997). 10.1063/1.364020
28. C. A. Londos, A. Andrianakis, V. V. Emtsev, and H. Ohyama, Semicond. Sci. Technol. 24, 075002 (2009). 10.1088/0268-1242/24/7/075002
29. C. A. Londos, A. Andrianakis, V. V. Emtsev, and H. Ohyama, J. Appl. Phys. 105, 123508 (2009). 10.1063/1.3148293
30. C. A. Londos, A. Andrianakis, E. N. Sgourou, V. V. Emtsev, and H. Ohyama J. Appl. Phys. 107, 093520 (2010). 10.1063/1.3391127
31. C. A. Londos, A. Andrianakis, E. N. Sgourou, V. V. Emtsev, and H. Ohyama J. Appl. Phys. 109, 033508 (2011). 10.1063/1.3544040
32. J. Chen, J. Vanhellemont, E. Simoen, J. Lauwaert, H. Vrielinck, J. M. Rafi, H. Ohyama, J. Weber, and D. Yang, Phys. Status Solidi C 8, 674 (2011). 10.1002/pssc.201000142
33. J. Vanhellemont, H. Yasuda, Y. Tokumoto, Y. Ohno, M. Suezawa, and I. Yonenaga, Phys. Stat. Sol. A 209, 1902 (2012). 10.1002/pssa.201200023
34. A. Chroneos, C. A. Londos, E. N. Sgourou, and P. Pochet, Appl. Phys. Lett. 99, 241901 (2011). 10.1063/1.3666226
35. A. Chroneos, C. A. Londos, and E. N. Sgourou, J. Appl. Phys. 110, 093507 (2011). 10.1063/1.3658261
36. M. L. David, E. Simoen, C. Clays, V. B. Neimash, M. Kra'sko, A. Kraitchinscii, V. Voytovych, A. Kabaldin, and J. F. Barbot, J. Phys.: Condens. Matter 17, S2255 (2005). 10.1088/0953-8984/17/22/013
37. M. L. David, E. Simoen, C. Clays, V. B. Neimash, M. Kra'sko, A. Kraitchinscii, V. Voytovych, A. Kabaldin, and J. F. Barbot, J. Phys.: Solid State Phenom. 108-109, 373 (2005). 10.4028/www.scientific.net/SSP.108-109.373
38. V. B. Neimash, V. V Voytovych, M. M. Kra'sko, A. M. Kraitchinscii, O. M. Kabaldin, Yu. V. Pavlovs'kyi, and V. M. Tssmots, Ukr. J. Phys. 50, 1273 (2005).
39. C. A. Londos, D. Aliprantis, E. N. Sgourou, A. Chroneos, and P. Pochet, J. Appl. Phys. 111, 123508 (2012). 10.1063/1.4729573
40. A. Baghdadi, W. M. Bullis, M. C. Choarkin, L. Yue-zhen, R. I. Scace, R. W. Series, P. Stallhofer, and M. Watanabe, J. Electrochem. Soc. 136, 2015 (1989) 10.1149/1.2097135
41. J. L. Regolini, J. P. Stroquert, C. Ganter, and P. Siffert, J. Electrochem. Soc. 133, 2165 (1986). 10.1149/1.2108362
42. V. D. Ahmetov and V. V. Bolotov, Radiat. Eff. 52, 149 (1980). 10.1080/00337578008210027
43. A. R. Bean, R. C. Newman, and R. S. Smith, J. Phys. Chem. Solids 31, 739 (1970). 10.1016/0022-3697(70)90207-6
44. A. Brelot and J. Charlemagne, Radiat. Eff. 9, 65 (1971). 10.1080/00337577108242034
45. G. D. Watkins, Phys. Rev. B 12, 4383 (1975). 10.1103/PhysRevB.12.4383
46. S. Brotzmann, H. Bracht, J. L. Hansen, A. N. Larsen, E. Simoen, E. E. Haller, J. S. Christensen, and P. Werner, Phys. Rev. B 77, 235207 (2008); 10.1103/PhysRevB.77.235207
47. A. Chroneos, H. Bracht, R. W. Grimes, and B. P. Uberuaga, Appl. Phys. Lett. 92, 172103 (2008); 10.1063/1.2918842
48. A. Chroneos, J. Appl. Phys. 105, 056101 (2009); 10.1063/1.3086664
49. A. Chroneos, J. Appl. Phys. 107, 076102 (2010). 10.1063/1.3361115
50. R. C. Newman and R. Jones, in Oxygen in Silicon, edited by, F. Shimura, Semiconductors and Semimetals Vol. 42 (Academic, Orlando, 1994), p. 289.
51. A. K. Tipping, R. C. Newman, D. C. Neuton, and J. H. Tucker, Mater. Sci. Forum 10-12, 887 (1986). 10.4028/www.scientific.net/MSF.10-12.887
52. W. Wijaranakula, J. Appl. Phys. 69, 2737 (1991). 10.1063/1.348964
53. J. Chen, and D. Yang, Phys. Status Solidi C 6, 625 (2009). 10.1002/pssc.200880709
54. J. Vanhellemont, M. Suezawa, and I. Yonenaga, J. Appl. Phys. 108, 016105 (2010). 10.1063/1.3449080
55. V.V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, B. A Andreev, D. F. Kuritsyn, A. Misiuk, B. Surma, and C. A. Londos, Phys. Status Solidi B 235, 75 (2003). 10.1002/pssb.200301534
56. A. Misiuk, J. Bak- Misiuk, A. Barcz, A. Romano-Rodriguez, I. V. Antonova, V. P. Popov, C. A. Londos, and J. Jun, Int. J. Hydrogen Energy 26, 483 (2001) 10.1016/S0360-3199(00)00094-X