The effect of carbon on diffusion in silicon

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 275-281

  Stolk, P A ^a,b   Gossmann, H J ^b   Eaglesham, D J ^b   Poate, J M ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Carbon; Diffusion; Ion implantation; Silicon

Indexed keywords

EID: 0010853254     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01273-7     Document Type: Article

References (32)

1. K. Cho, M. Numan, T.G. Finstad, W.K. Chu, J. Liu and J.J. Wortman, Appl. Phys. Lett., 47 (1985) 1321.
2. A.E. Michel, W. Rausch, P.A. Ronsheim and R.H. Kastl, Appl. Phys. Lett., 50 (1987) 416 .
3. N.E..B. Cowern, K.T.F. Janssen and H.F.F. Jos, J. Appl. Phys., 68 (1990) 6191.
4. D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann and J.M. Poate, Appl. Phys. Lett., 65 (1994) 2305.
5. A.R. Bean and R.C. Newman, Solid State Commun., 8 (1970) 175.
6. G.D. Watkins and K.L. Brower, Phys. Rev. Lett., 36 (1976), 1329; L.W. Song and G.D. Watkins, Phys. Rev. B, 42 (1990) 5759.
7. G.D. Watkins and K.L. Brower, Phys. Rev. Lett., 36 (1976), 1329; L.W. Song and G.D. Watkins, Phys. Rev. B, 42 (1990) 5759.
8. L.W. Song, X.D. Zhan, B.W. Benson and G.D. Watkins, Phys. Rev. B, 42 (1990) 5765.
9. G. Davies, K.T. Kun and T. Reade, Phys. Rev. B, 44 (1991) 12146.
10. H. Wong, N.W. Cheung, P.K. Chu, J. Liu and J.W. Mayer, Appl. Phys. Lett., 52 (1988) 1023.
11. S. Isomae, T. Ishiba, T. Ando and M. Tamura, J. Appl. Phys., 74 (1993) 3815.
12. J.R. Liefting, J.S. Custer and F.W. Saris, Mat. Res. Soc. Symp. Proc., 235 (1992) 179; Mater. Sci. Eng. B, 25 (1994) 60.
13. J.R. Liefting, J.S. Custer and F.W. Saris, Mat. Res. Soc. Symp. Proc., 235 (1992) 179; Mater. Sci. Eng. B, 25 (1994) 60.
14. S. Nishikawa, A. Tanaka and T. Yamaji, Appl. Phys. Lett., 60 (1992) 2270.
15. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, H.S. Luftman and J.M. Poate, Appl. Phys. Lett., 66 (1995) 568; P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham and J.M. Poate, Nucl. Instrum. Methods B, 96 (1995) 187.
16. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, H.S. Luftman and J.M. Poate, Appl. Phys. Lett., 66 (1995) 568; P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham and J.M. Poate, Nucl. Instrum. Methods B, 96 (1995) 187.
17. P.A. Stolk, D.J. Eaglesham, H.-J. Gossmann and J.M. Poate, Appl. Phys. Lett., 66 (1995) 1370.
18. H.-J. Gossmann, C.S. Rafferty, H.S. Luftman, F.C. Unterwald, T. Boone and J.M. Poate, Appl. Phys. Lett., 63 (1993) 639.
19. U. Gösele, Mat. Res. Soc. Symp. Proc., 59 (1986) 419.
20. L.A. Ladd, J.P. Kalejs and U. Gösele, Mat. Res. Soc. Symp. Proc., 36 (1985) 89.
21. T.Y. Tan and U. Gösele, Appl. Phys. A, 37 (1985) 1.
22. F.F. Morehead, Mat. Res. Soc. Symp. Proc., 104 (1988) 99.
23. H. Bracht, N.A. Stolwijk and H. Mehrer, Mat. Sci. Forum, 143-147 (1994) 785.
24. G.H. Gilmer, T. Diaz de la Rubia, D.M. Stock and M. Jaraiz, Nucl. Instrum. Methods B, to be published.
25. P.B. Griffin, PhD Thesis, Stanford University, 1989; SRC Technical Report T90091.
26. K.J. van Oostrum, P.C. Zalm, W.B. de Boer, D.J. Gravesteijn and J.W.F. Maes, Appl. Phys. Lett., 61 (1992) 1513.
27. H.-J. Gossmann, C.S. Rafferty, P.A. Stolk, D.J. Eaglesham, G.H. Gilmer, J.M. Poate, H.-H. Vuong, T.K. Mogi and M.O. Thompson, Mat. Res. Soc. Symp. Proc., 389, in press.
28. P.B. Griffin, S.T. Ahn, W.A. Tiller and J.D. Plummer, Appl. Phys. Lett., 51 (1987) 116.
29. M.R. Pinto, D.M. Boulin, C.S. Rafferty, R.K. Smith, W.M. Coughran, Jr., I.C. Kizilyalli and M.J. Thoma, IEDM-92 (1992) 923.
30. J. Zhu, Lawrence Livermore National Laboratories, personal communication.
31. M.J. Hill and P.M. Van Iseghem, in H.R. Huff and E. Sirtl (eds.), Semiconductor Silicon 1977, The Electrochemical Society, Princeton, NJ, 1977, p. 521.
32. H.J. Gossmann, P.A. Stolk, D.J. Eaglesham, C.S. Rafferty and J.M. Poate, to be published.