P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 430-434

  Posselt, M ^a   Schmidt, B ^a   Anwand, W ^a   Grotzschel R ^a   Heera, V ^a   Mucklich A ^a   Wundisch C ^a   Skorupa, W ^a   Hortenbach, H ^b   Gennaro, S ^c   Bersani, M ^c   Giubertoni, D ^c   Moller A ^d   Bracht, H ^e  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c FONDAZIONE BRUNO KESSLER   (Italy)

^d SGS Institut Fresenius GmbH   (Germany)

^e UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION; EPITAXIAL GROWTH; GERMANIUM; ION IMPLANTATION;

PHOSPHORUS IMPLANTATION; PREAMORPHIZED GERMANIUM; SOLID PHASE EPITAXIAL REGROWTH;

PHOSPHORUS;

EID: 38849148514     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2805249     Document Type: Article

References (19)

1. E. Simoen, A. Satta, A. D'Amore, T. Janssens, T. Clarysse, K. Martens, B. De Jaeger, A. Benedetti, I. Hoflijk, B. Brijs, M. Meuris, and W. Vandervorst, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 10.1016/j.mssp.2006.08.067 9, 634 (2006).
2. C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2037861 87, 091909 (2005).
3. A. Satta, T. Janssens, T. Clarysse, E. Simoen, M. Meuris, A. Benedetti, I. Hoflijk, B. De Jaeger, C. Demeurisse, and W. Vandervorst, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2162565 24, 494 (2006).
4. W. Skorupa, D. Panknin, W. Anwand, M. Voelskow, G. Ferro, Y. Monteil, A. Leycuras, J. Pezoldt, R. McMahon, M. Smith, J. Camassel, J. Stoemenos, E. Polychroniadis, P. Godignon, N. Mestres, D. Turover, S. Rushworth, and A. Friedberger, Mater. Sci. Forum MSFOEP 0255-5476 457-460, 175 (2004).
5. D. B. Cuttriss, Bell Syst. Tech. J. BSTJAN 0005-8580 40, 509 (1961).
6. M. Posselt, L. Bischoff, D. Grambole, and F. Herrmann, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2360238 89, 151918 (2006).
7. S. Koffel, A. Claverie, G. BenAssayag, and P. Scheiblin, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 10.1016/j.mssp.2006.08.015 9, 664 (2006).
8. T. Janssens, C. Huyghebaert, D. Vanhaeren, G. Winderickx, A. Satta, M. Meuris, and W. Vandervorst, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2151904 24, 510 (2006).
9. L. Csepregi, R. P. Küllen, J. W. Mayer, and T. W. Sigmon, Solid State Commun. SSCOA4 0038-1098 10.1016/0038-1098(77)90009-6 21, 1019 (1977).
10. V. I. Fistul, A. G. Yakovenko, A. A. Gvelesiani, V. N. Tsyganov, and R. L. Korchazhkina, Inorg. Mater. 11, 457 (1975). 0020-1685
11. A. Satta, E. Simoen, R. Duffy, T. Janssens, T. Clarysse, A. Benedetti, M. Meuris, and W. Vandervorst, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2196227 88, 162118 (2006).
12. S. Matsumoto and T. Niimi, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2131668 125, 1307 (1978).
13. U. Södervall and M. Friesel, Defect Diffus. Forum 143-147, 1053 (1997). 0015-8356
14. C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1618382 83, 3275 (2003).
15. M. S. Carroll and R. Koudelka, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/22/1/S39 22, S164 (2007).
16. F. J. Morin and J. P. Maita, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.94.1525 94, 1525 (1954).
17. H. Bracht and S. Brotzmann, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 10.1016/j.mssp.2006.08.041 9, 471 (2006).
18. H. Bracht, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.75.035210 75, 035210 (2007).
19. T. Clarysse, P. Eyben, T. Janssens, I. Hoflijk, D. Vanhaeren, A. Satta, M. Meuris, W. Vandervorst, J. Bogdanowicz, and G. Raskin, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2163880 24, 381 (2006).