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Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

Suppression of donor-vacancy clusters in germanium by concurrent annealing and irradiation

(2) Schneider, S a Bracht, H a

a UNIVERSITY OF MÜNSTER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT PROFILE; DOPING LEVELS; IN-SITU; INTERSTITIALS; PENETRATION DEPTH; THEORETICAL SIMULATION; THERMAL EQUILIBRIUMS; VACANCY CLUSTER; VACANCY CONCENTRATION;

ANNEALING; ARSENIC; DIFFUSION; DOPING (ADDITIVES); GERMANIUM; PHOSPHORUS; PROTONS; SECONDARY ION MASS SPECTROMETRY;

PROTON IRRADIATION;

EID: 78651275993 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3534791 Document Type: Article

Times cited : (21)

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- 2 layer deposited formerly. Experiments with P-implanted samples capped with silicon nitride shown in this work reduce the P dose loss to about 10% (40%) at 500° (680°) and do not reveal a retarded diffusion under irradiation.

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