Mechanisms of boron diffusion in silicon and germanium

Journal of Applied Physics

Volumn 113, Issue 3, 2013, Pages

  Mirabella, S ^a   De Salvador, D ^b   Napolitani, E ^b   Bruno, E ^a   Priolo, F ^a  

^a UNIVERSITY OF CATANIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION BARRIERS; ADJACENT SITES; B ATOMS; B CLUSTERING; B DIFFUSION; BI CLUSTERS; BORON DIFFUSIONS; CHARGE EXCHANGES; CO-DOPING; CONCENTRATION GRADIENTS; CONCOMITANT EFFECTS; DEFECT ENGINEERING; DOPING LEVELS; FORMATION ENERGIES; HIGH-TEMPERATURE ANNEALING; INDIRECT PROCESS; LOW TEMPERATURES; MIGRATION MECHANISMS; N-TYPE DOPANTS; N-TYPE DOPING; NON EQUILIBRIUM; ORDERS OF MAGNITUDE; P-TYPE DOPING; POSITIVELY CHARGED; SELF-INTERSTITIAL; THERMAL DISSOLUTION; UNDERLYING MECHANISM;

ACTIVATION ENERGY; CHARGE TRANSFER; CRYSTALLINE MATERIALS; DANGLING BONDS; DIFFUSION IN SOLIDS; DISSOLUTION; GERMANIUM; GERMANIUM OXIDES; PHOSPHORUS; POINT DEFECTS; SILICON;

AMORPHOUS SILICON;

EID: 84872864779     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4763353     Document Type: Review

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