Fluorine in silicon: Diffusion, trapping, and precipitation

Physical Review Letters

Volumn 90, Issue 15, 2003, Pages

  Pi, X D ^a   Burrows, C P ^a   Coleman, P G ^a  

^a University of Bath   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION; ELECTRON TRAPS; FLUORINE; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY; SECONDARY IN MASS SPECTROSCOPY; VACANCY MECHANISM;

SILICON;

EID: 0037526503     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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