Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application

Applied Physics Letters

Volumn 101, Issue 7, 2012, Pages

  Jung, Woo Shik ^a   Park, Jin Hong ^b   Nainani, Aneesh ^a   Nam, Donguk ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR SITES; BULK GERMANIUM; CHANNEL REGION; ELECTRICAL BEHAVIORS; ELECTRICAL PERFORMANCE; FLUORINE PASSIVATION; ION IMPLANT; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFET); N-TYPE DOPANTS; PERFORMANCE ENHANCEMENTS; SOURCE/DRAIN REGIONS; SPREADING RESISTANCE PROFILING; THERMAL-ANNEALING; VACANCY CONCENTRATION; VACANCY DEFECTS;

FLUORINE; LEAKAGE CURRENTS; MOSFET DEVICES; PASSIVATION; VACANCIES;

GERMANIUM;

EID: 84865412096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4746389     Document Type: Article

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