A-centers and isovalent impurities in germanium: Density functional theory calculations

Materials Science and Engineering: B

Volumn 176, Issue 5, 2011, Pages 453-457

  Chroneos, A ^a,b   Londos, C A ^c   Bracht, H ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c UNIVERSITY OF ATHENS   (Greece)

^d UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

A center; Germanium; Silicon

Indexed keywords

ATOMS; BINDING ENERGY; BINDING SITES; CARBON; DENSITY FUNCTIONAL THEORY; GERMANIUM; IMPURITIES; LATTICE THEORY; OXYGEN; OXYGEN VACANCIES; TIN;

A-CENTER; CARBON ATOMS; DENSITY-FUNCTIONAL THEORY CALCULATIONS; GERMANIUMS (GE); INTERSTITIAL ATOMS; INTERSTITIAL PAIRS; LATTICE VACANCY; NEAREST-NEIGHBOUR; OXYGEN INTERSTITIALS; SILICON ATOMS;

SILICON;

EID: 79952574961     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.01.004     Document Type: Article

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