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Journal of Applied Physics

Volumn 87, Issue 2, 2000, Pages 658-662

Reverse annealing, clustering, and electron mobility in arsenic doped silicon

(3) Solmi, S a Nobili, D a,b Shao, J a,c

a CNR (Italy)

b UNIVERSITY OF BOLOGNA (Italy)

c SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000276971 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.371922 Document Type: Article

Times cited : (31)

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