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Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

High phosphorous doped germanium: Dopant diffusion and modeling

(5) Cai, Yan a Camacho Aguilera, Rodolfo a Bessette, Jonathan T a Kimerling, Lionel C a Michel, Jurgen a

a Massachusetts Institute of Technology (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DELTA-DOPED LAYERS; DOPANT DIFFUSION; DOPANT LOSS; DOPANT SOURCES; DOPING LEVELS; GE THIN FILMS; IN-SITU; INTRINSIC DIFFUSIVITY; N-TYPE DOPING; OUT-DIFFUSION; PHOSPHOROUS CONCENTRATIONS; PHOSPHOROUS DIFFUSION; SI SUBSTRATES; UNIFORM DISTRIBUTION;

DIFFUSION; GERMANIUM; PHOSPHORUS;

DOPING (ADDITIVES);

EID: 84865268675 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4745020 Document Type: Article

Times cited : (41)

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