Effect of carbon on dopant-vacancy pair stability in germanium

Semiconductor Science and Technology

Volumn 26, Issue 9, 2011, Pages

  Chroneos, A ^a,b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CLUSTER FORMATIONS; CLUSTER GEOMETRIES; DENSITY FUNCTIONAL THEORY CALCULATIONS; EXPERIMENTAL STUDIES; VACANCY TRAP;

ARSENIC; BORON; BORON COMPOUNDS; DENSITY FUNCTIONAL THEORY; GERMANIUM; PHOSPHORUS; TIN; VACANCIES;

DOPING (ADDITIVES);

EID: 80052019947     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/9/095017     Document Type: Article

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