Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Journal of Applied Physics

Volumn 110, Issue 9, 2011, Pages

  Chroneos, A ^a   Londos, C A ^b   Sgourou, E N ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON IMPURITIES; CO-DOPING; CZOCHRALSKI SILICON; DEFECT CLUSTER; DEFECT ENGINEERING; DENSITY FUNCTIONAL THEORY CALCULATIONS; DETRIMENTAL EFFECTS; INTRINSIC DEFECTS; LATTICE VACANCY; SN DOPING; SUBSTITUTIONAL ATOMS; THEORETICAL RESULT; THEORETICAL TECHNIQUE;

CARBON; DENSITY FUNCTIONAL THEORY; LITHIUM COMPOUNDS; OXYGEN; OXYGEN VACANCIES; THERMODYNAMIC STABILITY; TIN; TINNING;

CRYSTAL DEFECTS;

EID: 81355136189     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658261     Document Type: Article

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