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Volumn 92, Issue 17, 2008, Pages

Vacancy-mediated dopant diffusion activation enthalpies for germanium

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ENTHALPY; GERMANIUM; VACANCIES;

EID: 43049094760     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2918842     Document Type: Article
Times cited : (143)

References (41)
  • 5
    • 43049090985 scopus 로고    scopus 로고
    • Diffusion in Semiconductors and Non-Metallic Solids: Diffusion in Semiconductors, edited by D. L. Beke, Landolt-Börnstein New Series III, Vol (Springer, Berlin).
    • Diffusion in Semiconductors and Non-Metallic Solids: Diffusion in Semiconductors, edited by, D. L. Beke, Landolt-Börnstein New Series III, Vol 33a (Springer, Berlin, 1998).
    • (1998) , vol.33


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.