Electrical characteristics of germanium n+/p junctions obtained using rapid thermal annealing of coimplanted P and Sb

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 608-610

  Thareja, G ^a   Cheng, S L ^a   Kamins, T ^a   Saraswat, K ^a   Nishi, Y ^a  

^a Stanford University   (United States)

Author keywords

Activation; antimony; contact resistance; germanium; junction; phosphorus

Indexed keywords

ACTIVATION; ELECTRICAL CHARACTERISTIC; IV CHARACTERISTICS; JUNCTION; N-TYPE DOPANTS; NMOSFETS; SOURCE/DRAIN REGIONS; TEMPERATURE DEPENDENT;

CONTACT RESISTANCE; DIODES; MOSFET DEVICES; PHOSPHORUS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TUNNEL DIODES;

GERMANIUM;

EID: 79955544527     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2119460     Document Type: Article

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