Tin-based group IV semiconductors: New platforms for opto- and microelectronics on silicon

Annual Review of Materials Research

Volumn 36, Issue , 2006, Pages 497-554

  Kouvetakis, J ^a   Menendez, J ^a   Chizmeshya, A V G ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Germanium; Integration; Optoelectronic; Silicon photonics; Sn

Indexed keywords

ADJUSTABLE BANDGAPS; SILICON PHOTONICS; STRAIN PROPERTIES; VIRTUAL SUBSTRATES;

CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; ENERGY GAP; GERMANIUM; INTEGRATION; MICROELECTRONICS; OPTOELECTRONIC DEVICES; SILICON; THERMODYNAMIC STABILITY; TIN;

SEMICONDUCTOR MATERIALS;

EID: 33749182644     PISSN: 15317331     EISSN: None     Source Type: Book Series    
DOI: 10.1146/annurev.matsci.36.090804.095159     Document Type: Article

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