Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities

Journal of Physics Condensed Matter

Volumn 17, Issue 22, 2005, Pages

  David, M L ^a,d   Simoen, E ^a   Claeys, C ^a,b   Neimash, V ^c   Kras'Ko, M ^c   Kraitchinskii, A ^c   Voytovych, V ^c   Kabaldin, A ^c   Barbot, J F ^d  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTE OF PHYSICS   (Ukraine)

^d UMR6630   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRON TRAPS; ENERGY GAP; IMPURITIES; IRRADIATION; SILICON;

ELECTRICALLY ACTIVE DEFECTS; FLUENCES; PERFECTION; VACANCY TRAP;

CRYSTAL GROWTH FROM MELT;

EID: 21144443810     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/22/013     Document Type: Article

References (44)

1. Khan A, Yamaguchi M, Kaneiwa M, Saga T, Abe T, Annzawa O and Matsuda S 2000 J. Appl. Phys. 87 8389
2. Ruzin A, Casse G, Laser M, Lemeilleur F, Matheson J, Watts S and Zanet A 2000 Mater. Sci. Semicond. Process. 3 257
3. Simoen E, Claeys C, Neimash V B, Kraitchinskii A, Kras'ko M, Puzenko O and Clauws P 2000 Appl. Phys. Lett. 76 2838
4. Nylandsted Larsen A, Goubet J J, Mejholm P, Sherman Christensen J, Fanciulli M, Gunnlaugsson H P, Weyer G, Wulff Petersen J, Resende A, Kaukonen M, Jones R, Öberg S, Briddon P R, Svensson B G, Lindström J L and Dannefaer S 2000 Phys. Rev. B 62 4535
5. Brelot A 1971 IEEE Trans. Nucl. Sci. 19 220
6. Brelot A and Charlemagne J 1971 Radiat. Eff. 9 65
7. Claeys C, Simoen E, Neimash V B, Kraitchinskii A, Kras'ko M, Puzenko O, Blondeel A and Clauws P 2001 J. Electrochem. Soc. 148 G738
8. Simoen E, Claeys C, Privitera V, Coffa S, Nylandsted Larsen A and Clauws P 2001 Physica B 308-310 477
9. Simoen E, Claeys C, Privitera V, Coffa S, Kokkoris M, Kossionides E, Fanourakis G, Nylandsted Larsen A and Clauws P 2002 Nucl. Instrum. Methods Phys. Res. B 186 19
10. Milants K, Verheyden J, Barancira T, Deweerd W, Pattyn H, Bukshpan S, Williamson D L, Vermeiren F, Van Tendeloo G, Vlekken C, Libbrecht S and Van Haesendonck C 1997 J. Appl. Phys. 81 2148
11. Simoen E, Rafi J M, Claeys C, Neimash V, Kraitchinskii A, Kras'ko M, Tischenko V, Voitovych V, Versluys J and Clauws P 2003 Japan. J. Appl. Phys. 42 7184
12. Neimash V, Kras'ko M, Voytovych V, Tischenko V, Simoen E, Rafí J M, Claeys C, Versluys J, De Gryse O and Clauws P 2004 Phys. Status Solidi 201-203 509
13. Yoneta M, Kamiura Y and Hashimoto F 1991 J. Appl. Phys. 70 1295
14. Endrös A 1989 Phys. Rev. Lett. 63 70
15. Hara A, Aoki M, Fukuda T and Ohsawa A 1993 J. Appl. Phys. 74 913
16. Chantre A, Bouchet L and Andre E 1988 J. Electrochem. Soc. 135 2867
17. Hara A, Aoki M, Fukuda T and Ohsawa A 1993 J. Appl. Phys. 74 913
18. Hara A, Koizuka M, Aoki M, Fukuda T, Yamada-Kaneta H and Mori H 1994 Japan. J. Appl. Phys. 33 5577
19. Tokuda Y, Katoh I, Ohshima H and Hattori T 1994 Semicond. Sci. Technol. 9 1733
20. Kamiura Y, Tsutsue M, Yamashita Y and Hashimoto F 1995 J. Appl. Phys. 78 4478
21. Watkins G D and Corbett J W 1961 Phys. Rev. 121 1001
22. Maric Dj M, Meier P F and Estreicher S K 1993 Phys. Rev. B 47 3620
23. Holm B, Bonde Nielsen K and Bech Nielsen B 1991 Phys. Rev. Lett. 66 2360
24. Johnson N M, Herring C and Van de Walle C G 1994 Phys. Rev. Lett. 73 130
25. Meijer E, Ledebo L Å and Wang Z-G 1983 Solid State Commun. 46 255
26. Meijer E, Grimmeiss H G and Ledebo L Å 1984 J. Appl. Phys. 55 4266
27. Simoen E, Clauws P, Huylebroeck G and Vennick J 1987 Semicond. Sci. Technol. 2 507
28. Kimerling L C and Benton J L 1981 Appl. Phys. Lett. 39 410
29. Benton J L, Kimerling L C and Stavola M 1983 Physica B 116 271
30. Stiévenard D, Lannoo M and Bourgoin J C 1985 Solid-State Electron. 28 485
31. Kamiura Y, Fukuda K, Ohyama S and Yamashita Y 2000 Japan. J. Appl. Phys. 39 1098
32. Kamiura Y, Hayashi M, Nishiyama Y, Ohyama S and Yamashita Y 1997 Japan. J. Appl. Phys. 36 6579
33. Feklisova O V and Yarykin N A 1997 Semicond. Sci. Technol. 12 742
34. Tokuda Y 1998 Japan. J. Appl. Phys. 37 1815
35. Omura Y, Hayakawa C, Suzuki T and Tajima K 1999 Japan. J. Appl. Phys. 38 4047
36. Tokuda Y, Shimada H and Ito A 1999 J. Appl. Phys. 86 5630
37. Tokuda Y and Seki T 2002 Semicond. Sci. Technol. 15 26
38. Lévêque P, Pellegrino P, Hallén A, Svensson B G and Privitera V 2001 Nucl. Instrum. Methods Phys. Res. B 174 297
39. David M-L, Oliviero E, Blanchard C and Barbot J F 2001 Nucl. Instrum. Methods Phys. Res. B 186 309
40. Evans-Freeman J H, Kan P Y Y and Abdelgader N 2002 J. Appl. Phys. 92 3755
41. Pellegrino P, Lévêque P, Lalita J, Hallén A, Jagadish C and Svensson B G 2001 Phys. Rev. B 64 195211
42. Brotherton S D, Gowers J P, Young N D, Clegg J B and Ayres J R 1986 J. Appl. Phys. 60 3567
43. Brotherton S D, Ayres J R, Clegg J B and Gowers J P 1988 J. Electron Mater. 18 173
44. Ayres J R, Brotherton S D, Clegg J B, Gill A and Gowers J P 1989 Semicond. Sci. Technol. 4 399