Interaction of A-centers with isovalent impurities in silicon

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Chroneos, A ^a   Londos, C A ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; CZOCHRALSKI; DEFECT PAIRS; DENSITY FUNCTIONAL THEORY CALCULATIONS; DOPED SILICON; IMPURITIES IN; INTERSTITIAL ATOMS; LATTICE VACANCY; NEAREST NEIGHBORS; SILICON CRYSTAL;

BINDING SITES; CRYSTAL IMPURITIES; DENSITY FUNCTIONAL THEORY; GERMANIUM; NUCLEAR ENERGY; OXYGEN; POTENTIAL ENERGY; TIN; VACANCIES;

BINDING ENERGY;

EID: 79251530527     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3409888     Document Type: Article

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