Suppressing phosphorus diffusion in germanium by carbon incorporation

Electronics Letters

Volumn 41, Issue 24, 2005, Pages 1354-1355

  Luo, G ^a   Cheng, C C ^b   Huang, C Y ^c   Hsu, S L ^a   Chien, C H ^b   Ni, W X ^a   Chang, C Y ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; DIFFUSION; GERMANIUM; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS;

CARBON INCORPORATION; MOSFET PROCESS; P-N JUNCTIONS; PHOSPHORUS DIFFUSION;

MOSFET DEVICES;

EID: 28444461500     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20052999     Document Type: Article

References (6)

1. Nayfeh, A., Chu, C.O., Yonehara, K., and Saraswat, K.C.: ' Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si ', IEEE Trans. Electron Device Lett., 2005, 26, p. 311-313
2. 2 gate dielectric and TaN gate electrode ', IEDM Tech. Dig., 2003, p. 18.2.1-18.2.4
3. Sze, S.M.: ' Physics of semiconductor devices ', (Wiley, New York 1981), p. 68
4. Luo, G.L., Yang, T.H., Chang, E.Y., Chang, C.Y., and Chao, K.A.: ' Growth of high-quality Ge epitaxial layers on Si (100) ', Jpn. J. Appl. Phys., 2003, 42, p. L517-L519
5. Uppal, S., Willoughby, A.F.W., Bonar, J.M., Evans, A.G.R., Cowern, N.E.W., Morris, R., and Dowsett, M.G.: ' Diffusion of ion-implanted boron in germanium ', J. Appl. Phys., 2001, 90, p. 4293-4295
6. Stolk, P.A., Gossmann, H.J., Eaglesham, D.J., and Poate, J.M.: ' The effect of carbon on diffusion in silicon ', Mater. Sci. Eng., 1996, B36, p. 275-281