Accurate modelling of average phosphorus diffusivities in germanium after long thermal anneals: Evidence of implant damage enhanced diffusivities

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Carroll, M S ^a   Koudelka, R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; INSERTION LOSSES; ION IMPLANTATION; RAPID THERMAL ANNEALING;

DOPANT LOSS; EXTRINSIC DIFFUSIVITY COEFFICIENT; PHOSPHORUS DIFFUSIVITIES;

PHOSPHORUS;

EID: 34247186839     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S39     Document Type: Article

References (8)

1. Chui C O, Kim H, Chi D, Triplett B, McIntyre P and Saraswat K 2002 A sub-400C germanium MOSFET technology with high-k dielectric and metal gate. Presented at IEDM (Washington, DC)
2. Jones R E et al 2002 Fabrication and modelling of gigahertz photodetectors in heteroepitaxial Ge-on-Si using a graded buffer layer deposited by low energy plasma enhanced CVD. Presented at IEDM
3. Dosunmu O I, Cannon D D, Emsley M K, Ghyselen B, Liu J, Kimerling L C and Unlu M S 2004 Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates IEEE J. Sel. Top. Quantum Electron. 10 694
4. Chui C O, Gopalakrishnan K, Griffin P, Plummer J D and Saraswat K C 2003 Activation and diffusion studies of ion-implanted p and n dopants in germanium Appl. Phys. Lett. 83 3275
5. +/p germanium junctions during rapid thermal annealing J. Electrochem. Soc. 152 G895
6. Suh Y S, Carroll M S, Levy R A, Sahiner M A, Bisognin G and King C A 2005 Modeling of boron and phosphorus implantation into (1 0 0) germanium IEEE Trans. Electron Devices 52 91
7. Haller E E 2004 Hydrogen in silicon and germanium: impurity activation and dopant passivation. Presented at Materials Research Society Symposium
8. Suh Y, Carroll M S, Levy R A, Bisognin G, De Salvador D and Sahiner M A 2005 Implantation and activation of high concentrations of boron and phosphorus in germanium. Presented at Materials Research Society Symposium (San Francisco, CA)