Extended point defects in crystalline materials: Ge and Si

Physical Review Letters

Volumn 110, Issue 15, 2013, Pages

  Cowern, N E B ^a   Simdyankin, S ^a   Ahn, C ^a   Bennett, N S ^a   Goss, J P ^a   Hartmann, J M ^b   Pakfar, A ^c   Hamm, S ^d   Valentin, J ^e   Napolitani, E ^f   De Salvador, D ^f   Bruno, E ^g   Mirabella, S ^g  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b CEA GRENOBLE   (France)

^c STMICROELECTRONICS   (France)

^d MATTSON THERMAL PRODUCTS GMBH   (United States)

^e PROBION Analysis   (France)

^f UNIVERSITY OF PADOVA   (Italy)

^g UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS POCKET; B DIFFUSION; COMPUTATIONAL MODELING; CRYSTALLINE SOLIDS; DEFECT DYNAMICS; HIGH TEMPERATURE; SADDLE POINT; SELF-INTERSTITIAL;

CRYSTALLINE MATERIALS; ENTROPY; POINT DEFECTS; SILICON;

GERMANIUM;

EID: 84876136172     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.155501     Document Type: Article

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