Modeling of phosphorus diffusion in Ge accounting for a cubic dependence of the diffusivity with the electron concentration

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2394-2397

  Canneaux, Thomas ^a   Mathiot, Daniel ^a   Ponpon, Jean Pierre ^a   Leroy, Yann ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

Dopant diffusion; E center; Germanium; Phosphorus; Point defects; Vacancy

Indexed keywords

ACCEPTOR STATE; CHARGED STATE; DIFFUSIVITIES; DOPANT DIFFUSION; E-CENTER; EFFECTIVE DIFFUSIVITIES; ELECTRON CONCENTRATION; EXPERIMENTAL DATA; FREE ELECTRON CONCENTRATION; FREE VACANCIES; P-DIFFUSION; PHOSPHORUS DIFFUSION; QUADRATIC DEPENDENCE; THEORETICAL STUDY;

DEFECTS; GERMANIUM; PHOSPHORUS; POINT DEFECTS;

DIFFUSION;

EID: 76049117303     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.171     Document Type: Article

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