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Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

The vacancy in silicon: A critical evaluation of experimental and theoretical results

(2) Bracht, Hartmut a Chroneos, Alexander a

a UNIVERSITY OF MÜNSTER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DIFFUSION; ELECTRONIC STRUCTURE; ENTHALPY; EXPERIMENTS; PHOSPHORUS; SEMICONDUCTOR DOPING; SILICON;

ACCURATE; ACTIVATION ENTHALPIES; CONSISTENT; CRITICAL EVALUATIONS; DOPANT DIFFUSIONS; EXPERIMENTAL STUDIES; STRUCTURE CALCULATIONS;

VACANCIES;

EID: 54049134037 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2996284 Document Type: Article

Times cited : (61)

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