Engineering the free vacancy and active donor concentrations in phosphorus and arsenic double donor-doped germanium

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Chroneos, A ^a   Grimes, R W ^a   Bracht, H ^b   Uberuaga, B P ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF MÜNSTER   (Germany)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMIC PHYSICS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GERMANIUM; LEAD; NONMETALS; PHOSPHORUS; VACANCIES;

ARSENIC DOPING; DONOR ATOMS; DONOR CONCENTRATIONS; FREE VACANCIES; HIGH TEMPERATURES; LATTICE VACANCIES; LOW TEMPERATURES; MASS ACTIONS; RELATIVELY CONSTANTS; STRUCTURE CALCULATIONS;

ATOMS;

EID: 58149264851     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3035847     Document Type: Article

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