Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge

Journal of Physics Condensed Matter

Volumn 17, Issue 48, 2005, Pages

  Coutinho, J ^a   Jones, R ^b   Torres, V J B ^a   Barroso, M ^a   Oberg S ^c   Briddon, P R ^d  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; PROBABILITY DENSITY FUNCTION; RELAXATION PROCESSES; SILICON;

DENSITY FUNCTIONAL MODELING; ELECTRON AFFINITIES; JAHN-TELLER INSTABILITIES; STRUCTURAL RELAXATIONS; VACANCY NET CHARGE;

GERMANIUM;

EID: 27844478163     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/48/L02     Document Type: Article

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