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Materials Science in Semiconductor Processing

Volumn 13, Issue 3, 2010, Pages 185-188

Thermal desorption of Ge native oxides and loss of Ge from the surface

(2) Oh, Jungwoo a Campbell, Joe C b

a SEMATECH (United States)

b UNIVERSITY OF VIRGINIA (United States)

Author keywords

Desorption; Germanium; Oxidation; Surface loss

Indexed keywords

ANNEALING CONDITION; CAP LAYERS; CHEMICAL BONDING STATE; COMBINED OXIDATION; DESORPTION PROCESS; DESORPTION TEMPERATURES; NATIVE OXIDES; NITROGEN AMBIENT; OXIDATION TEMPERATURE; SURFACE LOSS; X RAY PHOTOEMISSION SPECTROSCOPY;

ANNEALING; CHEMICAL BONDS; EMISSION SPECTROSCOPY; OXIDATION; SILICON COMPOUNDS; SURFACE CHEMISTRY; THERMAL DESORPTION;

GERMANIUM;

EID: 79952440356 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2010.10.009 Document Type: Article

Times cited : (17)

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