Impact of germanium on vacancy clustering in germanium-doped silicon

Journal of Applied Physics

Volumn 105, Issue 1, 2009, Pages

  Chroneos, A ^a   Grimes, R W ^a   Bracht, H ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY CALCULATIONS; DOPED SILICON; ELECTRONIC STRUCTURE CALCULATIONS; MASS ACTION; REALISTIC CONDITIONS; RELATIVE CONCENTRATION; TEMPERATURE RANGE; VACANCY CLUSTERING;

BINDING ENERGY; BINDING SITES; CARBON NANOTUBES; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; NUCLEAR ENERGY; POTENTIAL ENERGY; VACANCIES;

GERMANIUM;

EID: 67649822099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056387     Document Type: Article

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