Implantation and diffusion of phosphorous in germanium

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 640-643

  Chroneos, A ^a,b   Skarlatos, D ^a   Tsamis, C ^a   Christofi, A ^b   McPhail, D S ^b   Hung, R ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c BRUNEL UNIVERSITY   (United Kingdom)

Author keywords

Diffusion; Germanium; Implantation; Phosphorous

Indexed keywords

ANNEALING TIMES; CAPPING LAYER; IMPLANT DOSE;

ANNEALING; DIFFUSION; ION IMPLANTATION; PHOSPHORESCENCE; SECONDARY ION MASS SPECTROMETRY; SILICA;

GERMANIUM;

EID: 33845293760     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.001     Document Type: Article

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