Defect interactions in Sn1-x Gex random alloys

Applied Physics Letters

Volumn 94, Issue 25, 2009, Pages

  Chroneos, A ^a   Jiang, C ^b   Grimes, R W ^a   Schwingenschlogl U ^a,c   Bracht, H ^d  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^d UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT INTERACTIONS; ELECTRONIC STRUCTURE CALCULATIONS; II-VI COMPOUNDS; LATTICE PARAMETERS; LATTICE VACANCY; OPTOELECTRONIC APPLICATIONS; RANDOM ALLOY; RELATIVE ENERGIES; SPECIAL QUASIRANDOM STRUCTURES; VEGARD'S LAW;

ALLOYS; CERIUM ALLOYS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; GERMANIUM; TIN;

TIN ALLOYS;

EID: 67649494458     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3159468     Document Type: Article

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