Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

Physical Review B - Condensed Matter and Materials Physics

Volumn 88, Issue 8, 2013, Pages

  Kube, R ^a   Bracht, H ^a   Huger E ^b   Schmidt, H ^b   Hansen, J Lundsgaard ^c   Larsen, A Nylandsted ^c   Ager, J W ^d   Haller, E E ^d   Geue, T ^e   Stahn, J ^e  

^a UNIVERSITY OF MÜNSTER   (Germany)

^b CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^c AARHUS UNIVERSITY   (Denmark)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e PAUL SCHERRER INSTITUTE   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84884522116     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.085206     Document Type: Article

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