On the diffusion and activation of n-type dopants in Ge

Materials Science in Semiconductor Processing

Volumn 15, Issue 6, 2012, Pages 642-655

  Vanhellemont, Jan ^a   Simoen, Eddy ^b  

^a GHENT UNIVERSITY   (Belgium)

^b IMEC   (Belgium)

Author keywords

Activation; Donor; Donor diffusion; Donor solubility; Germanium; Point defect engineering; Vacancy

Indexed keywords

BEST CHOICE; CO-DOPING; DEFECT ENGINEERING; DONOR; DONOR ATOMS; DOPANT ATOMS; DOPANT CONCENTRATIONS; DOPANT DIFFUSIVITY; ELECTRON CONCENTRATION; FREE CARRIER CONCENTRATION; N-TYPE DOPANTS; SHALLOW JUNCTION;

CHEMICAL ACTIVATION; GERMANIUM; POINT DEFECTS; SOLUBILITY; TIN; VACANCIES;

DIFFUSION;

EID: 84870063230     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.06.014     Document Type: Review

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