Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

Journal of Applied Physics

Volumn 113, Issue 11, 2013, Pages

  Sgourou, E N ^a   Timerkaeva, D ^b,c   Londos, C A ^a   Aliprantis, D ^a   Chroneos, A ^d,e   Caliste, D ^b   Pochet, P ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b UNIV GRENOBLE ALPES   (France)

^c KAZAN FEDERAL UNIVERSITY   (Russian Federation)

^d IMPERIAL COLLEGE LONDON   (United Kingdom)

^e OPEN UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

2-MEV ELECTRON; COVALENT RADII; DEFECT PAIRS; DENSITY FUNCTIONAL THEORY CALCULATIONS; FTIR MEASUREMENTS; INTERSTITIALS; PB-DOPED SAMPLES; PRODUCTION OF;

BINDING ENERGY; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM; LEAD; SILICON; THERMODYNAMIC STABILITY; VACANCIES;

CRYSTAL DEFECTS;

EID: 84875750456     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4795510     Document Type: Article

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