Effect of germanium substrate loss and nitrogen on dopant diffusion in germanium

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Chroneos, A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; PHOSPHORUS; SILICA; SILICON NITRIDE; VANADIUM COMPOUNDS;

CAPPING LAYER MATERIALS; DOPANT DIFFUSIONS; DOPANT LOSS; EXPERIMENTAL EVIDENCES; EXPERIMENTAL STUDIES; GERMANIUM SUBSTRATES; LOW-TEMPERATURE ANNEALING; P DIFFUSIONS; SILICON DIOXIDES; STRUCTURE SIMULATIONS; SUBSTRATE LOSS;

GERMANIUM;

EID: 62549131203     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086664     Document Type: Article

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