메뉴 건너뛰기
Materials Chemistry and Physics
Volumn 44, Issue 2, 1996, Pages 101-143
Carbon-mediated effects in silicon and in silicon-related materials
Author keywords

Carbon in silicon; Etch stops; Gettering; Ion implantation; Ion beam synthesis; Secondary defects; SiC formation; SiGe heterostructures; Silicon wafer bonding; Silicon on insulator structures; Transient dopant diffusion
Indexed keywords

BONDING; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; HETEROJUNCTIONS; ION BEAMS; ION IMPLANTATION; SILICON; SILICON CARBIDE; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; SYNTHESIS (CHEMICAL);
EID: 0030151421     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/0254-0584(95)01673-I     Document Type: Review
Times cited : (36)
References (349)
  • 2
    • 0003998388 scopus 로고
    • CRC Press, Boca Raton, FL
    • th edn., CRC Press, Boca Raton, FL, 1980.
    • (1980) th Edn.
  • 9
    • 84975328995 scopus 로고
    • E. Sirtl, J. Goorissen and P. Wagner (eds.), The Electrochem. Soc., Pennington
    • H.W. Zulehner, in E. Sirtl, J. Goorissen and P. Wagner (eds.), Aggregation Phenomena of Point Defects in Silicon, The Electrochem. Soc., Pennington, 1983, p. 155.
    • (1983) Aggregation Phenomena of Point Defects in Silicon , pp. 155
    • Zulehner, H.W.1
  • 14
    • 0003767280 scopus 로고
    • H.R. Huff and R.B. Burgess (eds.), The Electrochem Soc., Princeton, NJ
    • Y. Takano and M. Malei, in H.R. Huff and R.B. Burgess (eds.), Semiconductor Silicon, The Electrochem Soc., Princeton, NJ, 1973, p. 469.
    • (1973) Semiconductor Silicon , pp. 469
    • Takano, Y.1    Malei, M.2
  • 16
    • 0542447603 scopus 로고
    • J.B. Schröder (ed.), Interscience, New York
    • R.C. Newman and J. Wakefield, in J.B. Schröder (ed.), Metallurgy of Semiconductor Materials, Vol. 15, Interscience, New York, 1961, p. 201; see also J. Phys. Chem. Solids, 19 (1961) 230.
    • (1961) Metallurgy of Semiconductor Materials , vol.15 , pp. 201
    • Newman, R.C.1    Wakefield, J.2
  • 17
    • 0000526181 scopus 로고
    • R.C. Newman and J. Wakefield, in J.B. Schröder (ed.), Metallurgy of Semiconductor Materials, Vol. 15, Interscience, New York, 1961, p. 201; see also J. Phys. Chem. Solids, 19 (1961) 230.
    • (1961) J. Phys. Chem. Solids , vol.19 , pp. 230
  • 20
    • 4243169580 scopus 로고
    • ASTM, Philadelphia, Procedure F120
    • Annual Book of ASTM Standards, ASTM, Philadelphia, 1981, Procedure F120, p. 543.
    • (1981) Annual Book of ASTM Standards , pp. 543
  • 25
    • 0010296220 scopus 로고
    • Oxygen, carbon, hydrogen and nitrogen in crystalline silicon
    • J.C. Mikkelsen, Jr., S.J. Pearton, J.W. Corbett and S.J. Pennycook (eds.)
    • S.M. Hu, in J.C. Mikkelsen, Jr., S.J. Pearton, J.W. Corbett and S.J. Pennycook (eds.), Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, Mater. Res. Soc. Symp. Proc., 59 (1985) 249.
    • (1985) Mater. Res. Soc. Symp. Proc. , vol.59 , pp. 249
    • Hu, S.M.1
  • 37
    • 0021371075 scopus 로고
    • A. Bourret, J. Thibault-Desseaux and D.N. Seidman, J. Appl. Phys., 55 (1984) 825; see also A. Bourret, Inst. Phys. Conf. Ser., 87 (1987) 39.
    • (1987) Inst. Phys. Conf. Ser. , vol.87 , pp. 39
    • Bourret, A.1
  • 39
    • 23744459130 scopus 로고
    • W. Bullis, U. Gösele and F. Shimura (eds.), The Electrochem. Soc., Pennington, NJ
    • R.B. Fair and Y. Kim, in W. Bullis, U. Gösele and F. Shimura (eds.), Defects in Silicon II, The Electrochem. Soc., Pennington, NJ, 1991, p. 423.
    • (1991) Defects in Silicon II , pp. 423
    • Fair, R.B.1    Kim, Y.2
  • 42
    • 0009437857 scopus 로고
    • H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), The Electrochem. Soc., Pennington
    • J.R. Patel, in H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), Semiconductor Silicon, The Electrochem. Soc., Pennington, 1981, p. 189.
    • (1981) Semiconductor Silicon , pp. 189
    • Patel, J.R.1
  • 51
    • 0003689862 scopus 로고
    • The American Society for Metals, Metals Park, OH
    • see also T.B. Massaki (Editor-in-Chief), Binary Alloy Phase Diagrams, The American Society for Metals, Metals Park, OH, 1986, Vol. 1.
    • (1986) Binary Alloy Phase Diagrams , vol.1
    • Massaki, T.B.1
  • 52
    • 0002585097 scopus 로고
    • H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), The Electrochem. Soc., Pennington
    • R.A. Craven, in H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), Semiconductor Silicon, The Electrochem. Soc., Pennington, 1981, p. 254.
    • (1981) Semiconductor Silicon , pp. 254
    • Craven, R.A.1
  • 53
    • 0019676310 scopus 로고
    • in H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), The Electrochem. Soc., Pennington
    • H.F. Shaake, S.C. Baber and R.F. Pinizzotto, in H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), Semiconductor Silicon, The Electrochem. Soc., Pennington, 1981, Vol. 81-5, p. 273.
    • (1981) Semiconductor Silicon , vol.81 , Issue.5 , pp. 273
    • Shaake, H.F.1    Baber, S.C.2    Pinizzotto, R.F.3
  • 56
    • 84912637240 scopus 로고
    • W.M. Bullis and L.C. Kimerling (eds.), The Electrochem. Soc., Pennington
    • C.Y. Kung, L. Forbes and J.D. Peng, in W.M. Bullis and L.C. Kimerling (eds.), Defects in Silicon, The Electrochem. Soc., Pennington, 1983, p. 185.
    • (1983) Defects in Silicon , pp. 185
    • Kung, C.Y.1    Forbes, L.2    Peng, J.D.3
  • 64
    • 0021886856 scopus 로고
    • L.C. Kimerling and J.M. Parsey (eds.), The Metallurgical Soc., Warrendale
    • A. Bourret, in L.C. Kimerling and J.M. Parsey (eds.), Proc. 13th Int. Conf. Defects in Semiconductors, The Metallurgical Soc., Warrendale, 1985, p. 129.
    • (1985) Proc. 13th Int. Conf. Defects in Semiconductors , pp. 129
    • Bourret, A.1
  • 65
    • 0642291828 scopus 로고
    • in H.R. Huff, R.J. Kriegler and Y. Takeishi (eds.), The Electrochem. Soc., Princeton
    • D. Helmreich and E. Sirtl, in H.R. Huff, R.J. Kriegler and Y. Takeishi (eds.), Semiconductor Silicon 1977, The Electrochem. Soc., Princeton, 1977, p. 626.
    • (1977) Semiconductor Silicon 1977 , pp. 626
    • Helmreich, D.1    Sirtl, E.2
  • 113
  • 115
    • 0019666848 scopus 로고
    • H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), The Electrochem. Soc., Pennington
    • A.G. Gullis, R. Series, H.C. Webber and N.G. Chew, in H.R. Huff, R.J. Kriegler and Y. Takeshi (eds.), Semiconductor Silicon, The Electrochem. Soc., Pennington, 1981, Vol. 81-5, p. 518.
    • (1981) Semiconductor Silicon , vol.81 , Issue.5 , pp. 518
    • Gullis, A.G.1    Series, R.2    Webber, H.C.3    Chew, N.G.4
  • 125
    • 30244512990 scopus 로고
    • Crystalline defects and contamination: Their impact and control in device manufacturing
    • B.O. Kolbesen, C. Claeys, P. Stallhofer and F. Tardif (eds.), The Electrochem Soc., Pennington, NJ
    • R.B.M. Girish, in B.O. Kolbesen, C. Claeys, P. Stallhofer and F. Tardif (eds.), Crystalline defects and contamination: their impact and control in device manufacturing, Proc. Sattelite Symp. ESSDERC 93, The Electrochem Soc., Pennington, NJ, 1993, p.170.
    • (1993) Proc. Sattelite Symp. ESSDERC 93 , pp. 170
    • Girish, R.B.M.1
  • 176
    • 0025248354 scopus 로고
    • Silicon-on-insulator technology and devices
    • Y. Omura and K. Izumi, Silicon-on-insulator technology and devices, Electrochem. Soc. Proc., 90-6 (1990) 509.
    • (1990) Electrochem. Soc. Proc. , vol.90 , Issue.6 , pp. 509
    • Omura, Y.1    Izumi, K.2
  • 232
    • 0028074150 scopus 로고
    • Growth, processing and characterization of semiconductor heterostructures
    • G. Gumbs, S. Luryi, B. Weiss and G. Wicks (eds.), Growth, Processing and Characterization of Semiconductor Heterostructures, Mater. Res. Soc. Symp. Proc., 326 (1994).
    • (1994) Mater. Res. Soc. Symp. Proc. , vol.326
    • Gumbs, G.1    Luryi, S.2    Weiss, B.3    Wicks, G.4
  • 267
    • 30244479237 scopus 로고
    • PhD Thesis, Cornell University, USA
    • J.W. Strane, PhD Thesis, Cornell University, USA, 1994.
    • (1994)
    • Strane, J.W.1
  • 291
    • 30244468328 scopus 로고
    • PhD Thesis, Utrecht University, The Netherlands
    • A. Cacciato, PhD Thesis, Utrecht University, The Netherlands, 1994.
    • (1994)
    • Cacciato, A.1
  • 299
    • 0642358182 scopus 로고
    • R.C. Marshall, J.W. Faust, Jr., and C.E. Ryan (eds.), University of South Carolina Press, Columbia
    • A. Addamiano, in R.C. Marshall, J.W. Faust, Jr., and C.E. Ryan (eds.), Silicon Carbide 1973, University of South Carolina Press, Columbia, 1974, p. 179; see also W.J. Choyke and L. Patrick, p. 261.
    • (1974) Silicon Carbide 1973 , pp. 179
    • Addamiano, A.1
  • 300
    • 30244552436 scopus 로고    scopus 로고
    • A. Addamiano, in R.C. Marshall, J.W. Faust, Jr., and C.E. Ryan (eds.), Silicon Carbide 1973, University of South Carolina Press, Columbia, 1974, p. 179; see also W.J. Choyke and L. Patrick, p. 261.
    • Choyke, W.J.1    Patrick, L.2
  • 302
    • 0040273851 scopus 로고
    • Wide band gap semiconductors
    • T.D. Moustakas, J.I. Pankove and Y. Hamakawa (eds.)
    • V. Heine, C. Cheng, G.E. Engel and R.J. Needs, in T.D. Moustakas, J.I. Pankove and Y. Hamakawa (eds.), Wide band gap semiconductors, Mater. Res. Soc. Symp. Proc., 242 (1992) 507.
    • (1992) Mater. Res. Soc. Symp. Proc. , vol.242 , pp. 507
    • Heine, V.1    Cheng, C.2    Engel, G.E.3    Needs, R.J.4
  • 310
    • 0041401385 scopus 로고
    • Advances in solid state physics
    • G. Pensl and R. Helbig, Advances in solid state physics, Festkoerperprobleme, 30 (1990) 133.
    • (1990) Festkoerperprobleme , vol.30 , pp. 133
    • Pensl, G.1    Helbig, R.2
  • 311
    • 0012413065 scopus 로고
    • Diamond, boron nitride, silicon carbide and related wide bandgap semiconductors
    • J.T. Glass, R.F. Messier and N. Fujimori (eds.), Diamond, boron nitride, silicon carbide and related wide bandgap semiconductors, Mat. Res. Soc. Symp. Proc., 162 (1990).
    • (1990) Mat. Res. Soc. Symp. Proc. , vol.162
    • Glass, J.T.1    Messier, R.F.2    Fujimori, N.3

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.