Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Naganawa, Miki ^a   Shimizu, Yasuo ^a   Uematsu, Masashi ^a   Itoh, Kohei M ^a   Sawano, Kentarou ^b   Shiraki, Yasuhiro ^b   Haller, Eugene E ^c  

^a KEIO UNIVERSITY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); DIFFUSION; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; POINT DEFECTS; SEMICONDUCTOR DOPING; VACANCIES;

ARSENIC DIFFUSIONS; CHARGE STATES; DIFFUSION PROFILES; DOMINANT POINTS; IMPLANTATION DAMAGES; NUMERICAL SIMULATORS; QUADRATIC DEPENDENCES; SIMULTANEOUS OBSERVATIONS; TRANSIENT ENHANCED DIFFUSIONS;

GERMANIUM;

EID: 56249145995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3025892     Document Type: Article

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