Point defect engineering strategies to suppress A-center formation in silicon

Applied Physics Letters

Volumn 99, Issue 24, 2011, Pages

  Chroneos, A ^a   Londos, C A ^b   Sgourou, E N ^b   Pochet, P ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF ATHENS   (Greece)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

A-CENTER; DEFECT ENGINEERING; DENSITY FUNCTIONAL THEORY CALCULATIONS; SN DOPING; VACANCY-OXYGEN PAIR;

DEFECTS; DENSITY FUNCTIONAL THEORY; HAFNIUM; POINT DEFECTS; TIN; ZIRCONIUM;

DEFECT DENSITY;

EID: 83755178794     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3666226     Document Type: Article

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