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Volumn 14, Issue 1, 2011, Pages

Ultra shallow arsenic junctions in germanium formed by millisecond laser annealing

(13) Hellings, Geert a,b Rosseel, Erik b Simoen, Eddy b Radisic, Dunja b Petersen, Dirch Hjorth c Hansen, Ole c Nielsen, Peter Folmer d Zschätzsch, Gerd a,b Nazir, Aftab a,b Clarysse, Trudo b Vandervorst, Wilfried a,b Hoffmann, Thomas Y b De Meyer, Kristin a,b

a UNIVERSITY OF LEUVEN (Belgium)

b IMEC (Belgium)

c TECHNICAL UNIVERSITY OF DENMARK (Denmark)

d Capres AS (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE GERMANIUM; ELECTRICAL ACTIVATION; ELECTRICALLY ACTIVES; LASER ANNEALING; LESS-DIFFUSION; PEAK TEMPERATURES; PRE-AMORPHIZATION; SOLID PHASE EPITAXIAL REGROWTH;

ANNEALING;

EID: 78651332956 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3512990 Document Type: Article

Times cited : (45)

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